IPI65R310CFD
Infineon Technologies
Deutsch
Artikelnummer: | IPI65R310CFD |
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Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | N-CHANNEL POWER MOSFET |
Datenblätte: | None |
RoHs Status: | ROHS3 -konform |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Anzahl | Einzelpreis |
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310+ | $0.97 |
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 4.5V @ 440µA |
Vgs (Max) | ±20V |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | PG-TO262-3-1 |
Serie | CoolMOS CFD2™ |
Rds On (Max) @ Id, Vgs | 310mOhm @ 4.4A, 10V |
Verlustleistung (max) | 104.2W (Tc) |
Verpackung / Gehäuse | TO-262-3 Long Leads, I²Pak, TO-262AA |
Paket | Bulk |
Produkteigenschaften | Eigenschaften |
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Betriebstemperatur | -55°C ~ 150°C (TJ) |
Befestigungsart | Through Hole |
Eingabekapazität (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Antriebsspannung (Max Rds On, Min Rds On) | 10V |
Drain-Source-Spannung (Vdss) | 650 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 11.4A (Tc) |
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IPI65R310CFDInfineon Technologies |
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